ss2 6 09 hall latch - high sensitivity 1 v 3.1 0 nov 1 , 20 1 3 f eat u r es a n d b e n ef i ts ? cmos hall ic technology ? bipolar output cmos multi - purpose latch ? solid - state reliability much better than reed switch ? operation down to 2.5v ? supply current down to 45 a, very low power consumption ? cmos inverter output (no pull - up resistance) ? high sensitivity for direct reed switch r e- placement application application examples ? solid state switch ? magneto - electric conversion switch ? magnet proximity sensor for reed switch r e- placement in low duty cycle applications 3 pin ts ot23 (suffix st t ) 3 pin sip (suffix ua) functional block diagram
ss2 6 09 hall latch - high sensitivity 2 v 3.1 0 nov 1 , 20 1 3 general de scription the ss2609 hall effect sensor ic is fabricated from mixed signal cmos technology. it incorporates advanced chopper - stabilization techniques to provide accurate an d stable magnetic switch points. the circuit design provides an internally controlled clocking mechanism to cycle power to the hall element and analog signal processing circuits. this serves to place the high current - consuming portions of the circuit into a ?sleep? mode. periodically the device is ?awakened? by this internal logic and the magnetic flux from the hall element is evaluated a gainst the predefined thresholds. if the flux density is above or below the b op /b rp thresholds then the output transistor is driven to change states accordingly. while in the ?sleep? cycle t he output transistor is latched in its previous state. the design has been optimized for service in applications requiring extended operating lifetime in battery powered systems. the outp ut transistor of the ss2609 switches low (turns on) when a magnetic field perpendicular to the hall sensor exceeds the operate point threshold (b op ) . after turn - on, the output voltage is v ds . the device remains on if the south pole is removed (b 0). this l atching property defines the device as a magnetic memory. when the magne t- ic field is reduced below the release point, b rp , the output transistor turns off (goes high). the difference in the magnetic operate and release points is the hysteresis (b hys ) of th e device. this built - in hysteresis prevents output oscillation near the switching point , and allows clean switching of the output even in the presence of external m e- chanical vibration and electrical noise. the t sot - 23 device is reversed from the ua pack age. the t sot - 23 output transistor will be latched on in the presence of a sufficiently strong north pole magnetic field applied to the marked face. glossary of terms internal timing circuit 0mt 0mt output level output level out = high flux density out = high b op 25 gs typ out = low out = low u a pac k ag e - lat c h c harac t er i s t i c b op 25 gs typ b r p - 25 gs typ flux density s tt pac k ag e - lat c h c hara ct er i s t ic b hys b hys b r p - 25 gs typ awake taw:20 s period sleep tsl:600 s time current 0 i sp i aw i av sample & output
ss2 6 09 hall latch - high sensitivity 3 v 3.1 0 nov 1 , 20 1 3 absolute maximum ratings p ar am eter s y m b o l v al ue un i ts s upply v oltage v dd 28 v s upply cu rr ent i dd 50 m a output v o ltage v o ut 28 v output cu rr ent i o ut 50 m a operating temperature range t a - 40 to 85 c storage temperature rang t s - 50 to 150 c esd sensitivity - 4000 v operating temperature range symbol value units temperature suffix ? e? t a - 40 to 85 c temperature suffix ? k ? t a - 40 to 1 25 c temperature suffix ? l? t a - 40 to 150 c e xc eed i ng t he ab s o l ute m a x i m u m r at i ngs m a y c a us e pe r m anent da m age. e xpo s ur e to ab s o l ute - m a xi m u m - r ated c o ndi t i o ns f or e x- ten ded pe r i o ds m a y a ff e c t de v i c e r e l i a bi l i t y . general electrical specifications dc o pe r a t i ng p a r a m ete r s t a = 25c , v dd = 2.5 v to 5.5v ( un l e s s ot he r w i s e s p e c i f i ed) parameter symbol test conditions min typ max units operating voltage v dd operating 2.5 3 5.5 v supply current i dd average 45 a output current i out 1.0 ma saturation voltage v sat i out =1ma 0.4 v awake mode time t aw operating 20 s sleep mode time t sl operating 600 s magnetic specifications dc operating parameters v dd = 2 . 5 to 5.5 v (unless otherwise specified) pa ckage parameter symbol test conditions min typ max units ua operating point b op ta=25c v dd = 2.75 v dc 5 25 40 g release point b rp - 40 - 25 - 5 g hysteresis b hyst 40 g so operating point b op ta=25c v dd = 2.75 v dc - 40 - 25 - 5 g release point b rp 5 25 40 g hysteresis b hyst 40 g
ss2 6 09 hall latch - high sensitivity 4 v 3.1 0 nov 1 , 20 1 3 output behavior versus magnetic pole dc operating parameters ta = - 40c to 150 c , v dd = 2. 5 to 5.5 v (unless otherwise specified) test conditions (ua) test conditions (so) out b < b rp b > b rp high b > b op b < b op low the sot - 23 device is reversed from the ua pack age. the sot - 23 output transistor will be turned on (drops low) in the presence of a sufficiently strong north pole magnetic field applied to the marked face and turned off(hoists high) in the presence of a sufficiently strong south pole magnetic field .
ss2 6 09 hall latch - high sensitivity 5 v 3.1 0 nov 1 , 20 1 3 package information package ua, 3 - pin sip: 4.0 0.01 1 2 3 1.27 2.13 1.87 1.00 1.20 45 1 1.52 0.1 3 1 0.75 0.05 3.0 0.01 0.44 0.01 0.05 0.05 1.6. 0.1 0.84(nom) 3 1 6 1 6 1 3 1 14 .5 1 active area depth: sensor location 1 2 3 notes: 1). controlling dimension : mm ; 2). le a ds must be free of flash and plating voids ; 3). do not bend leads within 1 mm of lead to package interface ; 4). pinout: pin 1 v dd pin 2 gnd pin 3 output 0.39 0.01 0.38 0.01 2.54
ss2 6 09 hall latch - high sensitivity 6 v 3.1 0 nov 1 , 20 1 3 package st , 3- pin t sot - 23: hall plate location ordering information part no. pb - free temperature code package code packing ss2609 estt yes - 40c to 85c t sot - 23 7- in. reel, 3000 pieces/ reel ss2609 eau yes - 40c to 85c to - 92 bulk, 1000 pieces/ bag ss2609 kstt yes - 40c to 125c t sot - 23 7- in. reel, 3000 pieces/ reel ss2609 kau yes - 40c to 125c to - 92 bulk, 1000 pieces/ bag ss2609 lstt yes - 40c to 150c t sot - 23 7- in. reel, 3000 pieces/ reel ss2609 lau yes - 40c to 150c to - 92 bulk, 1000 pieces/ bag 0. 3 6 0. 4 6 0.95 1.50 chip 3 2 1 bottom view of t sot - 23 package 2. 82 3. 02 0. 70 0. 90 0.70 0. 80 0.00 0.10 0.35 0.50 0. 08 0.2 0 0.20 m in 2.6 5 2. 95 1. 60 1. 70 1.70 2.10 3 2 1 top side vie end notes 1). pinout: pin 1 v dd pin 2 output pin 3 gnd 2). all dimensions are in millimeters;
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